KSA1220AYS
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 23 hours ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Number of Pins | 3 |
| Weight | 761mg |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Bulk |
| Published | 2001 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -160V |
| Max Power Dissipation | 20W |
| Current Rating | -1.2A |
| Frequency | 175MHz |
| Base Part Number | KSA1220 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.2W |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 175MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | -160V |
| Max Collector Current | -1.2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 300mA 5V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 200mA, 1A |
| Collector Emitter Breakdown Voltage | 45V |
| Current - Collector (Ic) (Max) | 1.2A |
| Transition Frequency | 175MHz |
| Collector Emitter Saturation Voltage | -400mV |
| Max Breakdown Voltage | 160V |
| Collector Base Voltage (VCBO) | -160V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 160 |
| Max Junction Temperature (Tj) | 150°C |
| Height | 14.2mm |
| Length | 8mm |
| Width | 3.25mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
