KSB1116GTA
| Parameters | |
|---|---|
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Box (TB) |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | MATTE TIN |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | NOT APPLICABLE |
| Time@Peak Reflow Temperature-Max (s) | NOT APPLICABLE |
| JESD-30 Code | O-PBCY-T3 |
| Qualification Status | COMMERCIAL |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power - Max | 750mW |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 50mA, 1A |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Current - Collector (Ic) (Max) | 1A |
| Transition Frequency | 120MHz |
| Frequency - Transition | 120MHz |
| RoHS Status | ROHS3 Compliant |
| Mounting Type | Through Hole |
See Relate Datesheet
