KSB1116SYTA
| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Supplier Device Package | TO-92-3 |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Box (TB) |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Base Part Number | KSB1116 |
| Power - Max | 750mW |
| Transistor Type | PNP |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 135 @ 100mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 50mA, 1A |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Current - Collector (Ic) (Max) | 1A |
| Frequency - Transition | 120MHz |
See Relate Datesheet
