Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack |
Number of Pins | 3 |
Weight | 2.27g |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tube |
Published | 2000 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | Other Transistors |
Voltage - Rated DC | -60V |
Max Power Dissipation | 2W |
Current Rating | -3A |
Frequency | 9MHz |
Base Part Number | KSB1366 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 2W |
Case Connection | ISOLATED |
Transistor Application | AMPLIFIER |
Gain Bandwidth Product | 9MHz |
Polarity/Channel Type | PNP |
Transistor Type | PNP |
Collector Emitter Voltage (VCEO) | 60V |
Max Collector Current | 3A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 500mA 5V |
Current - Collector Cutoff (Max) | 100μA ICBO |
Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 2A |
Collector Emitter Breakdown Voltage | 60V |
Transition Frequency | 9MHz |
Collector Emitter Saturation Voltage | -500mV |
Collector Base Voltage (VCBO) | -60V |
Emitter Base Voltage (VEBO) | -7V |
hFE Min | 100 |
Height | 15.87mm |
Length | 10.16mm |
Width | 2.54mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |