Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Weight | 1.8g |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tube |
Published | 2013 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | Other Transistors |
Voltage - Rated DC | -150V |
Max Power Dissipation | 25W |
Current Rating | -2A |
Frequency | 5MHz |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 25W |
Transistor Application | AMPLIFIER |
Gain Bandwidth Product | 5MHz |
Polarity/Channel Type | PNP |
Transistor Type | PNP |
Collector Emitter Voltage (VCEO) | 150V |
Max Collector Current | 2A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 400mA 10V |
Current - Collector Cutoff (Max) | 50μA ICBO |
JEDEC-95 Code | TO-220AB |
Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
Collector Emitter Breakdown Voltage | 150V |
Transition Frequency | 5MHz |
Collector Emitter Saturation Voltage | -1V |
Collector Base Voltage (VCBO) | -200V |
Emitter Base Voltage (VEBO) | -5V |
hFE Min | 40 |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |