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KSC2316YTA

KSC2316YTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-KSC2316YTA
  • Package: TO-226-3, TO-92-3 Long Body (Formed Leads)
  • Datasheet: PDF
  • Stock: 826
  • Description: KSC2316YTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads)
Number of Pins 3
Weight 371.1027mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 120V
Max Power Dissipation 900mW
Terminal Position BOTTOM
Current Rating 800mA
Frequency 120MHz
Base Part Number KSC2316
Number of Elements 1
Element Configuration Single
Power Dissipation 900mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 120MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 120V
Max Collector Current 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Collector Emitter Breakdown Voltage 120V
Transition Frequency 120MHz
Collector Emitter Saturation Voltage 1V
Max Breakdown Voltage 120V
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 5V
hFE Min 80
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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