Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | LAST SHIPMENTS (Last Updated: 3 days ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 Long Body (Formed Leads) |
Number of Pins | 3 |
Weight | 371.1027mg |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Box (TB) |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | Other Transistors |
Voltage - Rated DC | 60V |
Max Power Dissipation | 1W |
Terminal Position | BOTTOM |
Current Rating | 700mA |
Frequency | 50MHz |
Base Part Number | KSC2331 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 1W |
Transistor Application | SWITCHING |
Gain Bandwidth Product | 50MHz |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 60V |
Max Collector Current | 700mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 50mA 2V |
Current - Collector Cutoff (Max) | 100nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
Collector Emitter Breakdown Voltage | 60V |
Transition Frequency | 50MHz |
Collector Emitter Saturation Voltage | 200mV |
Max Breakdown Voltage | 60V |
Collector Base Voltage (VCBO) | 80V |
Emitter Base Voltage (VEBO) | 8V |
hFE Min | 40 |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |