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KSC388CYTA

KSC388CYTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-KSC388CYTA
  • Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Datasheet: PDF
  • Stock: 468
  • Description: KSC388CYTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Vce Saturation (Max) @ Ib, Ic 200mV @ 1.5mA, 15mA
Collector Emitter Breakdown Voltage 25V
Transition Frequency 300MHz
Collector Emitter Saturation Voltage 200mV
Max Breakdown Voltage 25V
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 4V
hFE Min 20
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Lifecycle Status LIFETIME (Last Updated: 6 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Weight 240mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 25V
Max Power Dissipation 300mW
Terminal Position BOTTOM
Current Rating 50mA
Frequency 300MHz
Base Part Number KSC388
Number of Elements 1
Element Configuration Single
Power Dissipation 300mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 12.5mA 12.5V
Current - Collector Cutoff (Max) 100nA ICBO
See Relate Datesheet

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