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KSC900GTA

KSC900GTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-KSC900GTA
  • Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Datasheet: PDF
  • Stock: 793
  • Description: KSC900GTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage 25V
Voltage - Collector Emitter Breakdown (Max) 25V
Current - Collector (Ic) (Max) 50mA
Collector Emitter Saturation Voltage 100mV
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 5V
hFE Min 120
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Supplier Device Package TO-92-3
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Published 2002
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 25V
Max Power Dissipation 250mW
Current Rating 50mA
Frequency 100MHz
Base Part Number KSC900
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 250mW
Power - Max 250mW
Gain Bandwidth Product 100MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500μA 3V
See Relate Datesheet

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