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KSD261GBU

KSD261GBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-KSD261GBU
  • Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Datasheet: PDF
  • Stock: 966
  • Description: KSD261GBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 20V
Max Power Dissipation 500mW
Current Rating 500mA
Base Part Number KSD261
Number of Elements 1
Element Configuration Single
Power Dissipation 500mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 20V
Collector Emitter Saturation Voltage 180mV
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 5V
hFE Min 120
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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