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KSD363YTU

KSD363YTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-KSD363YTU
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 966
  • Description: KSD363YTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Number of Elements 1
Element Configuration Single
Power Dissipation 40W
Transistor Application AMPLIFIER
Gain Bandwidth Product 10MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 120V
Max Collector Current 6A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1A 5V
Current - Collector Cutoff (Max) 1mA ICBO
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 1A
Collector Emitter Breakdown Voltage 120V
Transition Frequency 10MHz
Collector Base Voltage (VCBO) 300V
Emitter Base Voltage (VEBO) 8V
hFE Min 40
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2000
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 120V
Max Power Dissipation 40W
Current Rating 6A
Frequency 10MHz
Base Part Number KSD363
See Relate Datesheet

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