KSD882YS
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Number of Pins | 3 |
| Weight | 761mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 1W |
| Current Rating | 3A |
| Frequency | 90MHz |
| Base Part Number | KSD882 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1W |
| Case Connection | ISOLATED |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 90MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 30V |
| Max Collector Current | 3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 1A 2V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Collector Emitter Breakdown Voltage | 30V |
| Transition Frequency | 90MHz |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Base Voltage (VCBO) | 40V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 60 |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
