Parameters | |
---|---|
Transition Frequency | 65MHz |
Collector Emitter Saturation Voltage | -1.8V |
Collector Base Voltage (VCBO) | -40V |
Emitter Base Voltage (VEBO) | -8V |
hFE Min | 70 |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) |
Contact Plating | Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-225AA, TO-126-3 |
Number of Pins | 3 |
Weight | 761mg |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tube |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | Other Transistors |
Voltage - Rated DC | -25V |
Max Power Dissipation | 15W |
Current Rating | -5A |
Frequency | 65MHz |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 15W |
Gain Bandwidth Product | 65MHz |
Polarity/Channel Type | PNP |
Transistor Type | PNP |
Collector Emitter Voltage (VCEO) | 25V |
Max Collector Current | 5A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 45 @ 2A 1V |
Current - Collector Cutoff (Max) | 100nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 1.8V @ 1A, 5A |
Collector Emitter Breakdown Voltage | 25V |