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KSE350S

KSE350S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-KSE350S
  • Package: TO-225AA, TO-126-3
  • Datasheet: PDF
  • Stock: 214
  • Description: KSE350S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Current - Collector Cutoff (Max) 100μA ICBO
Collector Emitter Breakdown Voltage 300V
Collector Base Voltage (VCBO) -300V
Emitter Base Voltage (VEBO) -5V
hFE Min 30
RoHS Status RoHS Compliant
Lead Free Lead Free
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Weight 761mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -300V
Max Power Dissipation 20W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating -500mA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 20W
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) -300V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA 10V
See Relate Datesheet

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