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KSE45H11TU

KSE45H11TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-KSE45H11TU
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 342
  • Description: KSE45H11TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) -80V
Emitter Base Voltage (VEBO) -5V
hFE Min 60
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Lifecycle Status LIFETIME (Last Updated: 5 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2001
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -80V
Max Power Dissipation 1.67W
Current Rating -10A
Frequency 40MHz
Base Part Number KSE45H
Number of Elements 1
Element Configuration Single
Power Dissipation 1.67W
Transistor Application SWITCHING
Gain Bandwidth Product 40MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 2A 1V
Current - Collector Cutoff (Max) 10μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
Collector Emitter Breakdown Voltage 80V
Transition Frequency 40MHz
Collector Emitter Saturation Voltage -1V
See Relate Datesheet

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