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KSP45TA

KSP45TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-KSP45TA
  • Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Datasheet: PDF
  • Stock: 376
  • Description: KSP45TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

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Parameters
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 750mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 350V
Collector Emitter Saturation Voltage 750mV
Max Breakdown Voltage 350V
Collector Base Voltage (VCBO) 400V
Emitter Base Voltage (VEBO) 6V
hFE Min 50
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Weight 240mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 350V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Current Rating 300mA
Base Part Number KSP45
Number of Elements 1
Element Configuration Single
Power Dissipation 625mW
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 350V
Max Collector Current 300mA
See Relate Datesheet

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