L6386ED
| Parameters | |
|---|---|
| Turn-Off Delay Time | 150 ns |
| Rise / Fall Time (Typ) | 50ns 30ns |
| Channel Type | Independent |
| Turn On Time | 0.15 µs |
| Output Peak Current Limit-Nom | 0.65A |
| Driven Configuration | Half-Bridge |
| Gate Type | IGBT, N-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 400mA 650mA |
| High Side Driver | YES |
| Logic Voltage - VIL, VIH | 1.5V 3.6V |
| Turn Off Time | 0.15 µs |
| High Side Voltage - Max (Bootstrap) | 600V |
| Height | 1.65mm |
| Length | 8.75mm |
| Width | 4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 14-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 14 |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tube |
| JESD-609 Code | e4 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 14 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) |
| Subcategory | MOSFET Drivers |
| Max Power Dissipation | 750mW |
| Technology | BCD |
| Voltage - Supply | 17V Max |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Number of Functions | 1 |
| Supply Voltage | 15V |
| Frequency | 400kHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | L6386 |
| Pin Count | 14 |
| Number of Outputs | 2 |
| Output Voltage | 580V |
| Max Output Current | 650mA |
| Power Supplies | 15V |
| Power Dissipation | 750mW |
| Propagation Delay | 150 ns |
| Input Type | Inverting |
| Turn On Delay Time | 150 ps |
| Rise Time | 50ns |
| Fall Time (Typ) | 30 ns |
L6386ED Overview
A higher degree of flexibility is achieved by adopting its 14-SOIC (0.154, 3.90mm Width) package.Tube is the form of the package.Surface Mount is mounted in the way.In the absence of a 17V Max supply voltage, it can demonstrate its superiority.A gate type of IGBT, N-Channel MOSFET is used in its design.For this device, the temperature range is -40°C~150°C TJ.The input type is Inverting.Mosfet driver is based on 14 terminations.There are numerous related parts listed under its base part number L6386.The device is mounted using Surface Mount.A total of 14 pins are available on the device.In order to operate, a voltage of 15V has to be applied.In the maximum case, the output current can be limited to 650mA.There are several useful electronic components in this subcategory of MOSFET Drivers.The number of component pins is 14.Max (Bootstrap) can be as high as 600V.For its basis, there are 2 outputs integrated.Based on its maximum power dissipation of 750mW, it is clear that it is capable of transferring and conducting power loss without overheating.Due to its power supply of 15V, it provides an effective solution to power supply problems for a wide range of applications.In this case, it outputs 580V voltage.When 400kHz is used frequently, efficiency can be improved.
L6386ED Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
14 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 750mW
L6386ED Applications
There are a lot of STMicroelectronics L6386ED gate drivers applications.
- Line drivers
- 48 V to 12 V PoL Converters, 48 V to Low Voltage Bus Converter,
- Dual-Battery Systems
- Welding
- Industrial Modules
- Active Clamp Flyback or Forward and Synchronous Rectifier
- Commercial air-conditioning (CAC)
- Pulse transformer drivers
- High power buffers
- High frequency line drivers
