Parameters | |
---|---|
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Current Rating | 9A |
Frequency | 1.6GHz |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | LET16045 |
Pin Count | 2 |
JESD-30 Code | R-PDFM-F2 |
Number of Elements | 1 |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 100W |
Case Connection | SOURCE |
Current - Test | 400mA |
Transistor Application | AMPLIFIER |
Drain to Source Voltage (Vdss) | 80V |
Polarity/Channel Type | N-CHANNEL |
Transistor Type | LDMOS |
Continuous Drain Current (ID) | 9A |
Gate to Source Voltage (Vgs) | 15V |
Gain | 16dB |
Drain Current-Max (Abs) (ID) | 9A |
Drain to Source Breakdown Voltage | 80V |
Power - Output | 45W |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Voltage - Test | 28V |
RoHS Status | ROHS3 Compliant |
Mount | Screw |
Package / Case | M243 |
Number of Pins | 243 |
Packaging | Bulk |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Max Operating Temperature | 150°C |
Min Operating Temperature | -65°C |
Subcategory | FET General Purpose Powers |
Max Power Dissipation | 100W |
Terminal Position | DUAL |
Terminal Form | FLAT |