Parameters | |
---|---|
Max Power Dissipation | 130W |
Terminal Position | DUAL |
Terminal Form | FLAT |
Current Rating | 12A |
Frequency | 945MHz |
Base Part Number | LET9060 |
Pin Count | 2 |
JESD-30 Code | R-PDFP-F2 |
Number of Elements | 1 |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Case Connection | SOURCE |
Current - Test | 400mA |
Transistor Application | AMPLIFIER |
Drain to Source Voltage (Vdss) | 80V |
Polarity/Channel Type | N-CHANNEL |
Transistor Type | LDMOS |
Continuous Drain Current (ID) | 12A |
Gate to Source Voltage (Vgs) | 15V |
Gain | 18dB |
Power - Output | 75W |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Voltage - Test | 28V |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Mount | Surface Mount |
Package / Case | M250 |
Number of Pins | 3 |
Packaging | Tray |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Max Operating Temperature | 150°C |
Min Operating Temperature | -65°C |
Subcategory | FET General Purpose Power |