LMG1020YFFR
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | 6-UFBGA, DSBGA |
| Surface Mount | YES |
| Operating Temperature | -40°C~125°C TJ |
| Packaging | Tape & Reel (TR) |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Voltage - Supply | 4.75V~5.25V |
| Terminal Position | BOTTOM |
| Terminal Form | BALL |
| Number of Functions | 1 |
| Supply Voltage | 5V |
| Terminal Pitch | 0.4mm |
| Base Part Number | LMG1020 |
| JESD-30 Code | R-XBGA-B6 |
| Input Type | Inverting, Non-Inverting |
| Output Current-Max | 7A |
| Rise / Fall Time (Typ) | 375ps 350ps |
| Interface IC Type | BUFFER OR INVERTER BASED PERIPHERAL DRIVER |
| Channel Type | Single |
| Number of Drivers | 1 |
| Driven Configuration | Low-Side |
| Gate Type | N-Channel, P-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 7A 5A |
| Logic Voltage - VIL, VIH | 1.8V 1.7V |
| Turn Off Time | 0.0043 µs |
| Built-in Protections | THERMAL; UNDER VOLTAGE |
| Output Current Flow Direction | SOURCE SINK |
| Height Seated (Max) | 0.625mm |
| Width | 0.855mm |
| RoHS Status | ROHS3 Compliant |
LMG1020YFFR Description
LMG1020YFFR is a single, low-side driver designed for driving GaN FETs and logic-level MOSFETs in high-speed applications including LiDAR, time-of-flight, facial recognition,and any power converters involving low side drivers. The design simplicity of the LMG1020YFFR enables extremely fast propagation delays of 2.5 nanoseconds and minimum pulse width of 1 nanosecond. The drive strength is independently adjustable for the pull-up and pull-down edges by connecting external resistors between the gate and OUTH and OUTL, respectively.
The driver features under voltage lockout (UVLO) and over temperature protection (OTP) in the event of overload or fault conditions.
LMG1020YFFR Features
Low-Side, Ultra-Fast Gate Driver for GaN and Silicon FETs
1 ns Minimum Input Pulse Width
Up to 60 MHz Operation
2.5 ns Typical, 4.5 ns Maximum Propagation Delay
400 ps Typical Rise and Fall Time
7-A Peak Source and 5-A Peak Sink Currents
5-V Supply Voltage
UVLO and Overtemperature Protection
0.8 mm × 1.2 mm WCSP Package
LMG1020YFFR Applications
LiDAR
Time-of-Flight Laser Drivers
Facial Recognition
Class-E Wireless Chargers
VHF Resonant Power Converters
GaN-Based Synchronous Rectifier
Augmented Reality
LMG1020YFFR is a single, low-side driver designed for driving GaN FETs and logic-level MOSFETs in high-speed applications including LiDAR, time-of-flight, facial recognition,and any power converters involving low side drivers. The design simplicity of the LMG1020YFFR enables extremely fast propagation delays of 2.5 nanoseconds and minimum pulse width of 1 nanosecond. The drive strength is independently adjustable for the pull-up and pull-down edges by connecting external resistors between the gate and OUTH and OUTL, respectively.
The driver features under voltage lockout (UVLO) and over temperature protection (OTP) in the event of overload or fault conditions.
LMG1020YFFR Features
Low-Side, Ultra-Fast Gate Driver for GaN and Silicon FETs
1 ns Minimum Input Pulse Width
Up to 60 MHz Operation
2.5 ns Typical, 4.5 ns Maximum Propagation Delay
400 ps Typical Rise and Fall Time
7-A Peak Source and 5-A Peak Sink Currents
5-V Supply Voltage
UVLO and Overtemperature Protection
0.8 mm × 1.2 mm WCSP Package
LMG1020YFFR Applications
LiDAR
Time-of-Flight Laser Drivers
Facial Recognition
Class-E Wireless Chargers
VHF Resonant Power Converters
GaN-Based Synchronous Rectifier
Augmented Reality
