Parameters |
Factory Lead Time |
1 Week |
Mounting Type |
Surface Mount, Wettable Flank |
Package / Case |
19-WFQFN Exposed Pad |
Surface Mount |
YES |
Operating Temperature |
-40°C~125°C TJ |
Packaging |
Tape & Reel (TR) |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
2 (1 Year) |
Number of Terminations |
19 |
Terminal Finish |
Matte Tin (Sn) |
Voltage - Supply |
6V~18V |
Terminal Position |
QUAD |
Terminal Form |
NO LEAD |
Number of Functions |
1 |
Supply Voltage |
5V |
Base Part Number |
LMG1210 |
JESD-30 Code |
R-PQCC-N19 |
Input Type |
TTL |
Output Current-Max |
3A |
Rise / Fall Time (Typ) |
500ps 500ps |
Channel Type |
Independent |
Number of Drivers |
2 |
Turn On Time |
0.018 µs |
Output Peak Current Limit-Nom |
0.11A |
Driven Configuration |
Half-Bridge |
Gate Type |
N-Channel MOSFET |
Current - Peak Output (Source, Sink) |
1.5A 3A |
Turn Off Time |
0.018 µs |
Built-in Protections |
THERMAL; UNDER VOLTAGE |
High Side Voltage - Max (Bootstrap) |
200V |
Output Current Flow Direction |
SOURCE SINK |
Height Seated (Max) |
0.8mm |
Length |
4mm |
Width |
3mm |
RoHS Status |
ROHS3 Compliant |
LMG1210RVRT Description
LMG1210RVRT is a 200V half-bridge MOSFET. It was developed for ultra-high frequency and high-efficiency applications. In order to ensure the highest performance in a range of different applications, it permits designers to choose the most suitable diode for bootstraps that charges the higher-side capacitor for bootstrap. An internal switch switches the diode for the bootstrap to on when its low side is turned off thus preventing from charging the side with high voltage.
LMG1210RVRT Features
High-speed DC-DC converters
RF envelope tracking
Class-D audio amplifiers
Class-E wireless charging
High-precision motor control
LMG1210RVRT Applications