LND150N3-G-P002
| Parameters | |
|---|---|
| Rise Time | 450ns |
| Drive Voltage (Max Rds On,Min Rds On) | 0V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 1.3 μs |
| Turn-Off Delay Time | 100 ns |
| Continuous Drain Current (ID) | 30mA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 0.03A |
| Drain to Source Breakdown Voltage | 500V |
| FET Feature | Depletion Mode |
| Height | 5.33mm |
| Length | 5.21mm |
| Width | 4.19mm |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Weight | 453.59237mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2014 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| JESD-30 Code | O-PBCY-T3 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 740mW Ta |
| Element Configuration | Single |
| Turn On Delay Time | 90 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1000 Ω @ 500μA, 0V |
| Input Capacitance (Ciss) (Max) @ Vds | 10pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 30mA Tj |
See Relate Datesheet
