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LND150N3-G-P003

MOSFET,DEPLETION-MODE,500V,1K Ohm3 TO-92T/R


  • Manufacturer: Microchip Technology
  • Nocochips NO: 536-LND150N3-G-P003
  • Package: TO-226-3, TO-92-3 (TO-226AA)
  • Datasheet: PDF
  • Stock: 237
  • Description: MOSFET,DEPLETION-MODE,500V,1K Ohm3 TO-92T/R (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 740mW Ta
Element Configuration Single
Turn On Delay Time 90 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1000 Ω @ 500μA, 0V
Input Capacitance (Ciss) (Max) @ Vds 10pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30mA Tj
Rise Time 450ns
Drive Voltage (Max Rds On,Min Rds On) 0V
Vgs (Max) ±20V
Fall Time (Typ) 1.3 μs
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 30mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 500V
FET Feature Depletion Mode
Height 5.33mm
Length 5.21mm
Width 4.19mm
RoHS Status ROHS3 Compliant
See Relate Datesheet

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