Parameters | |
---|---|
Packaging | Tape & Reel (TR) |
Current - Continuous Drain (Id) @ 25°C | 13mA Tj |
Rise Time | 450ns |
Drive Voltage (Max Rds On,Min Rds On) | 0V |
Published | 2014 |
Vgs (Max) | ±20V |
Fall Time (Typ) | 450 ns |
JESD-609 Code | e3 |
Turn-Off Delay Time | 100 ns |
Continuous Drain Current (ID) | 13mA |
Part Status | Active |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 500V |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
FET Feature | Depletion Mode |
Height | 950μm |
Length | 2.9mm |
Number of Terminations | 3 |
Width | 1.3mm |
RoHS Status | ROHS3 Compliant |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) - annealed |
Additional Feature | HIGH INPUT IMPEDANCE |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Number of Channels | 1 |
Power Dissipation-Max | 360mW Ta |
Mounting Type | Surface Mount |
Element Configuration | Single |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Number of Pins | 3 |
Power Dissipation | 360mW |
Turn On Delay Time | 90 ns |
Weight | 1.437803g |
FET Type | N-Channel |
Transistor Element Material | SILICON |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 1000 Ω @ 500μA, 0V |
Operating Temperature | -55°C~150°C TJ |
Input Capacitance (Ciss) (Max) @ Vds | 10pF @ 25V |