Parameters | |
---|---|
Max Breakdown Voltage | 30V |
Dark Current | 100nA |
Infrared Range | YES |
Light Current-Nom | 1mA |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | Radial |
Number of Pins | 2 |
Shape | Round |
Operating Temperature | -40°C~85°C TA |
Packaging | Bulk |
Published | 2004 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Additional Feature | HIGH SENSITIVITY |
Subcategory | Photo Transistors |
Max Power Dissipation | 100mW |
Orientation | Side View |
Number of Functions | 1 |
Number of Elements | 1 |
Polarity | NPN |
Element Configuration | Single |
Power Dissipation | 100mW |
Viewing Angle | 70° |
Output Power | 100mW |
Optoelectronic Device Type | PHOTO TRANSISTOR |
Lens Style | Clear, Domed |
Rise Time | 10μs |
Fall Time (Typ) | 15 μs |
Collector Emitter Voltage (VCEO) | 5V |
Max Collector Current | 2.4mA |
Wavelength - Peak | 940 nm |
Collector Emitter Breakdown Voltage | 30V |
Lens Color | Clear |
Collector Emitter Saturation Voltage | 400mV |