Parameters | |
---|---|
Additional Feature | HIGH SENSITIVITY |
Subcategory | Photo Transistors |
Max Power Dissipation | 100mW |
Orientation | Side View |
Number of Functions | 1 |
Reach Compliance Code | unknown |
Number of Elements | 1 |
Polarity | NPN |
Configuration | SINGLE |
Power Dissipation | 100mW |
Viewing Angle | 30° |
Optoelectronic Device Type | PHOTO TRANSISTOR |
Lens Style | Domed |
Rise Time | 20μs |
Fall Time (Typ) | 20 μs |
Collector Emitter Voltage (VCEO) | 5V |
Max Collector Current | 600μA |
Collector Emitter Breakdown Voltage | 30V |
Wavelength | 940nm |
Collector Emitter Saturation Voltage | 400mV |
Max Breakdown Voltage | 30V |
Factory Lead Time | 1 Week |
Dark Current | 100nA |
Mount | Through Hole |
Infrared Range | YES |
Mounting Type | Through Hole |
Light Current-Nom | 1mA |
Package / Case | Radial, Side View |
RoHS Status | ROHS3 Compliant |
Number of Pins | 2 |
Shape | ROUND |
Operating Temperature | -40°C~85°C TA |
Packaging | Bag |
Published | 2000 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |