Parameters | |
---|---|
Shape | ROUND |
Operating Temperature | -40°C~85°C TA |
Packaging | Bulk |
Published | 2000 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Additional Feature | HIGH SENSITIVITY |
Subcategory | Photo Transistors |
Max Power Dissipation | 100mW |
Orientation | Top View |
Number of Functions | 1 |
Polarity | NPN |
Configuration | SINGLE |
Power Dissipation | 100mW |
Viewing Angle | 20° |
Output Power | 100mW |
Optoelectronic Device Type | PHOTO TRANSISTOR |
Lens Style | Domed |
Size | 3mm |
Rise Time | 10μs |
Fall Time (Typ) | 10 μs |
Collector Emitter Voltage (VCEO) | 30V |
Max Collector Current | 9.6mA |
Wavelength - Peak | 940 nm |
Collector Emitter Breakdown Voltage | 30V |
Current - Collector (Ic) (Max) | 4.8mA |
Max Breakdown Voltage | 30V |
Dark Current | 100nA |
Infrared Range | YES |
Response Time-Max | 0.000005s |
Light Current-Nom | 4mA |
Height | 6.65mm |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | T-1 |
Number of Pins | 1 |