Parameters | |
---|---|
Continuous Drain Current (ID) | 800mA |
Gate to Source Voltage (Vgs) | -3V |
Gain | 15.5dB |
Power - Output | 500mW |
Voltage - Test | 50V |
Height | 3.25mm |
Length | 13.97mm |
Width | 4.06mm |
RoHS Status | RoHS Compliant |
Packaging | Bulk |
Published | 2014 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Max Operating Temperature | 95°C |
Min Operating Temperature | -40°C |
Voltage - Rated | 65V |
Subcategory | FET RF Small Signal |
Max Power Dissipation | 10.3W |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Current Rating | 800mA |
Frequency | 0Hz~3GHz |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Current - Test | 15mA |
Polarity/Channel Type | N-CHANNEL |
Transistor Type | HEMT |