Parameters | |
---|---|
Surface Mount | YES |
Transistor Element Material | GALLIUM NITRIDE |
Packaging | Bulk |
Published | 2011 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Voltage - Rated | 65V |
Current Rating (Amps) | 8.6A |
Terminal Position | DUAL |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 2 |
JESD-30 Code | R-CDFM-F2 |
Number of Elements | 1 |
Configuration | SINGLE |
Operating Mode | ENHANCEMENT MODE |
Case Connection | SOURCE |
Current - Test | 250mA |
Transistor Application | AMPLIFIER |
Polarity/Channel Type | N-CHANNEL |
Transistor Type | HEMT |
Gain | 18.6dB |
Drain Current-Max (Abs) (ID) | 14.2A |
Power - Output | 250W |
FET Technology | HIGH ELECTRON MOBILITY |
Voltage - Test | 50V |
Highest Frequency Band | L B |
RoHS Status | RoHS Compliant |