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MAGX-001214-500L00

TRANSISTOR GAN 500W 1.2-1.4GHZ


  • Manufacturer: M/A-Com Technology Solutions
  • Nocochips NO: 482-MAGX-001214-500L00
  • Package: Ceramic
  • Datasheet: PDF
  • Stock: 504
  • Description: TRANSISTOR GAN 500W 1.2-1.4GHZ (Kg)

Details

Tags

Parameters
Continuous Drain Current (ID) 18.1A
Gate to Source Voltage (Vgs) -8V
Gain 19.22dB
Power - Output 500W
Voltage - Test 50V
RoHS Status RoHS Compliant
Package / Case Ceramic
Packaging Bulk
Published 2013
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 95°C
Min Operating Temperature -40°C
Voltage - Rated 65V
Subcategory FET RF Small Signal
Max Power Dissipation 583W
Current Rating 18.1A
Frequency 1.2GHz~1.4GHz
Current - Test 400mA
Drain to Source Voltage (Vdss) 175V
Polarity/Channel Type N-CHANNEL
Transistor Type HEMT
See Relate Datesheet

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