Parameters | |
---|---|
Continuous Drain Current (ID) | 18.1A |
Gate to Source Voltage (Vgs) | -8V |
Gain | 19.22dB |
Power - Output | 500W |
Voltage - Test | 50V |
RoHS Status | RoHS Compliant |
Package / Case | Ceramic |
Packaging | Bulk |
Published | 2013 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Max Operating Temperature | 95°C |
Min Operating Temperature | -40°C |
Voltage - Rated | 65V |
Subcategory | FET RF Small Signal |
Max Power Dissipation | 583W |
Current Rating | 18.1A |
Frequency | 1.2GHz~1.4GHz |
Current - Test | 400mA |
Drain to Source Voltage (Vdss) | 175V |
Polarity/Channel Type | N-CHANNEL |
Transistor Type | HEMT |