Parameters | |
---|---|
Case Connection | SOURCE |
Current - Test | 250mA |
Transistor Application | AMPLIFIER |
Drain to Source Voltage (Vdss) | 175V |
Polarity/Channel Type | N-CHANNEL |
Transistor Type | HEMT |
Continuous Drain Current (ID) | 3A |
Gate to Source Voltage (Vgs) | -8V |
Gain | 11.2dB |
Drain Current-Max (Abs) (ID) | 3A |
Power - Output | 30W |
FET Technology | HIGH ELECTRON MOBILITY |
Voltage - Test | 50V |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Mount | Screw |
Package / Case | Ceramic |
Number of Pins | 3 |
Packaging | Bulk |
Published | 2011 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Max Operating Temperature | 95°C |
Min Operating Temperature | -40°C |
Voltage - Rated | 65V |
Max Power Dissipation | 27W |
Terminal Position | DUAL |
Terminal Form | FLAT |
Current Rating | 1.5A |
Frequency | 2.7GHz~3.1GHz |
Pin Count | 2 |
JESD-30 Code | R-CDFM-F2 |
Number of Elements | 1 |
Configuration | SINGLE |
Operating Mode | ENHANCEMENT MODE |