MAT03FHZ
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-78-6 Metal Can |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| JESD-609 Code | e4 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Gold (Au) |
| Max Power Dissipation | 500mW |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Base Part Number | MAT03 |
| Pin Count | 6 |
| Number of Elements | 2 |
| Polarity | PNP |
| Element Configuration | Dual |
| Power Dissipation | 500mW |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 190MHz |
| Transistor Type | 2 PNP (Dual) |
| Collector Emitter Voltage (VCEO) | 36V |
| Max Collector Current | 20mA |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 100μA, 1mA |
| Collector Emitter Breakdown Voltage | 36V |
| Current - Collector (Ic) (Max) | 20mA |
| Transition Frequency | 190MHz |
| Collector Emitter Saturation Voltage | 25mV |
| Collector Base Voltage (VCBO) | 36V |
| Emitter Base Voltage (VEBO) | 36V |
| hFE Min | 40 |
| DC Current Gain-Min (hFE) | 80 |
| VCEsat-Max | 0.1 V |
| Height | 4.7mm |
| Length | 9.4mm |
| Width | 9.4mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
See Relate Datesheet
