MB110M-BP
| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | 4-DIP (0.200, 5.08mm) |
| Surface Mount | YES |
| Diode Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2008 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| HTS Code | 8541.10.00.80 |
| Subcategory | Bridge Rectifier Diodes |
| Technology | Schottky |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 4 |
| JESD-30 Code | R-PDSO-G4 |
| Qualification Status | Not Qualified |
| Number of Elements | 4 |
| Configuration | BRIDGE, 4 ELEMENTS |
| Diode Type | Single Phase |
| Current - Reverse Leakage @ Vr | 500nA @ 100V |
| Voltage - Forward (Vf) (Max) @ If | 850mV @ 1A |
| Output Current-Max | 1A |
| Current - Average Rectified (Io) | 1A |
| Number of Phases | 1 |
| Non-rep Pk Forward Current-Max | 30A |
| Voltage - Peak Reverse (Max) | 100V |
| Breakdown Voltage-Min | 100V |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
