MB210S-TP
| Parameters | |
|---|---|
| Diode Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2005 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Subcategory | Bridge Rectifier Diodes |
| Technology | Schottky |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PDSO-G4 |
| Number of Elements | 4 |
| Configuration | BRIDGE, 4 ELEMENTS |
| Diode Type | Single Phase |
| Current - Reverse Leakage @ Vr | 500μA @ 100V |
| Voltage - Forward (Vf) (Max) @ If | 850mV @ 2A |
| Output Current-Max | 2A |
| Current - Average Rectified (Io) | 2A |
| Number of Phases | 1 |
| Non-rep Pk Forward Current-Max | 50A |
| Voltage - Peak Reverse (Max) | 100V |
| Breakdown Voltage-Min | 100V |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | TO-269AA, 4-BESOP |
| Surface Mount | YES |
See Relate Datesheet
