MBR12020CT
| Parameters | |
|---|---|
| Max Reverse Voltage (DC) | 20V |
| Average Rectified Current | 120A |
| Number of Phases | 1 |
| Peak Reverse Current | 1A |
| Max Repetitive Reverse Voltage (Vrrm) | 20V |
| Diode Configuration | 1 Pair Common Cathode |
| Max Forward Surge Current (Ifsm) | 800A |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Factory Lead Time | 1 Week |
| Lifecycle Status | PRODUCTION (Last Updated: 6 months ago) |
| Mount | Chassis Mount |
| Mounting Type | Chassis Mount |
| Package / Case | Twin Tower |
| Number of Pins | 2 |
| Diode Element Material | SILICON |
| Packaging | Bulk |
| Published | 2012 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| HTS Code | 8541.10.00.80 |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Elements | 2 |
| Element Configuration | Common Cathode |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Schottky |
| Current - Reverse Leakage @ Vr | 3mA @ 20V |
| Voltage - Forward (Vf) (Max) @ If | 650mV @ 120A |
| Forward Current | 60A |
| Max Reverse Leakage Current | 1μA |
| Operating Temperature - Junction | -55°C~150°C |
| Max Surge Current | 800A |
| Application | POWER |
| Current - Average Rectified (Io) | 120A DC |
| Forward Voltage | 650mV |
See Relate Datesheet
