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MBR200150CTR

MBR200150CTR datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available at Feilidi


  • Manufacturer: GeneSiC Semiconductor
  • Nocochips NO: 347-MBR200150CTR
  • Package: Twin Tower
  • Datasheet: PDF
  • Stock: 346
  • Description: MBR200150CTR datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Element Configuration Common Anode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 3mA @ 150V
Voltage - Forward (Vf) (Max) @ If 880mV @ 100A
Operating Temperature - Junction -55°C~150°C
Application POWER
Max Reverse Voltage (DC) 150V
Average Rectified Current 100A
Number of Phases 1
Non-rep Pk Forward Current-Max 1500A
Diode Configuration 1 Pair Common Anode
Reverse Current-Max 3000μA
RoHS Status RoHS Compliant
Factory Lead Time 1 Week
Lifecycle Status PRODUCTION (Last Updated: 5 months ago)
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Twin Tower
Diode Element Material SILICON
Packaging Bulk
Published 2016
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Position UPPER
Terminal Form UNSPECIFIED
JESD-30 Code R-PUFM-X2
Operating Temperature (Max) 150°C
Number of Elements 2
See Relate Datesheet

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