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MBR20060CTR

MBR20060CTR datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available at Feilidi


  • Manufacturer: GeneSiC Semiconductor
  • Nocochips NO: 347-MBR20060CTR
  • Package: Twin Tower
  • Datasheet: -
  • Stock: 372
  • Description: MBR20060CTR datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status PRODUCTION (Last Updated: 6 months ago)
Mount Cable, Chassis Mount
Mounting Type Chassis Mount
Package / Case Twin Tower
Diode Element Material SILICON
Packaging Bulk
Published 2012
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Max Operating Temperature 175°C
Min Operating Temperature -40°C
Pitch 4.2mm
Terminal Position UPPER
Orientation Straight
Terminal Form UNSPECIFIED
JESD-30 Code R-PUFM-X2
Number of Contacts 4
Number of Elements 2
Element Configuration Common Anode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 5mA @ 20V
Voltage - Forward (Vf) (Max) @ If 750mV @ 100A
Max Voltage Rating (DC) 600.6kV
Forward Current 200A
Max Reverse Leakage Current 1μA
Max Surge Current 1.5kA
Output Current-Max 100A
Application POWER
Current - Average Rectified (Io) 200A DC
Max Reverse Voltage (DC) 60V
Average Rectified Current 200A
Number of Phases 1
Peak Reverse Current 1A
Max Repetitive Reverse Voltage (Vrrm) 60V
Diode Configuration 1 Pair Common Anode
RoHS Status RoHS Compliant
See Relate Datesheet

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