MBR20100CD-E1
| Parameters | |
|---|---|
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | LOW NOISE |
| HTS Code | 8541.10.00.80 |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSSO-G2 |
| Operating Temperature (Max) | 150°C |
| Number of Elements | 2 |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Schottky |
| Current - Reverse Leakage @ Vr | 100μA @ 100V |
| Voltage - Forward (Vf) (Max) @ If | 850mV @ 10A |
| Operating Temperature - Junction | -65°C~150°C |
| Output Current-Max | 10A |
| Application | HIGH VOLTAGE POWER |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Current - Average Rectified (Io) | 10A |
| Number of Phases | 1 |
| Rep Pk Reverse Voltage-Max | 100V |
| Non-rep Pk Forward Current-Max | 150A |
| Diode Configuration | 1 Pair Common Cathode |
| Reverse Current-Max | 100μA |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Surface Mount | YES |
| Diode Element Material | SILICON |
| Packaging | Tube |
| Published | 2015 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
See Relate Datesheet
