MBR2H100SFT3G
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | SOD-123F |
| Surface Mount | YES |
| Number of Pins | 2 |
| Diode Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Additional Feature | FREE WHEELING DIODE |
| HTS Code | 8541.10.00.80 |
| Subcategory | Rectifier Diodes |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MBR2H100 |
| Pin Count | 2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Schottky |
| Current - Reverse Leakage @ Vr | 40μA @ 100V |
| Voltage - Forward (Vf) (Max) @ If | 840mV @ 2A |
| Forward Current | 2A |
| Max Reverse Leakage Current | 500μA |
| Operating Temperature - Junction | -65°C~175°C |
| Max Surge Current | 50A |
| Output Current-Max | 2A |
| Application | POWER |
| Halogen Free | Halogen Free |
| Forward Voltage | 840mV |
| Max Reverse Voltage (DC) | 100V |
| Average Rectified Current | 2A |
| Number of Phases | 1 |
| Peak Reverse Current | 500μA |
| Max Repetitive Reverse Voltage (Vrrm) | 100V |
| Peak Non-Repetitive Surge Current | 50A |
| Max Forward Surge Current (Ifsm) | 50A |
| Height | 900μm |
| Length | 2.9mm |
| Width | 1.8mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
