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MBR400100CTR

MBR400100CTR datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available at Feilidi


  • Manufacturer: GeneSiC Semiconductor
  • Nocochips NO: 347-MBR400100CTR
  • Package: Twin Tower
  • Datasheet: -
  • Stock: 607
  • Description: MBR400100CTR datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Application POWER
Current - Average Rectified (Io) 400A DC
Forward Voltage 840mV
Max Reverse Voltage (DC) 100V
Average Rectified Current 400A
Number of Phases 1
Peak Reverse Current 1A
Max Repetitive Reverse Voltage (Vrrm) 100V
Diode Configuration 1 Pair Common Anode
Max Forward Surge Current (Ifsm) 3kA
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Factory Lead Time 1 Week
Mount Chassis Mount, Through Hole
Mounting Type Chassis Mount
Package / Case Twin Tower
Number of Pins 2
Diode Element Material SILICON
Packaging Bulk
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination Solder
Max Operating Temperature 175°C
Min Operating Temperature -40°C
Pitch 4.2mm
Terminal Position UPPER
Orientation Straight
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Contacts 14
Number of Elements 2
Element Configuration Common Anode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky, Reverse Polarity
Current - Reverse Leakage @ Vr 5mA @ 20V
Voltage - Forward (Vf) (Max) @ If 840mV @ 200A
Max Voltage Rating (DC) 600.6kV
Forward Current 200A
Max Reverse Leakage Current 1μA
Operating Temperature - Junction -55°C~150°C
Max Surge Current 3kA
See Relate Datesheet

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