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MBR400200CT

DIODE SCHOTTKY 200V 200A 2 TOWER


  • Manufacturer: GeneSiC Semiconductor
  • Nocochips NO: 347-MBR400200CT
  • Package: Twin Tower
  • Datasheet: PDF
  • Stock: 591
  • Description: DIODE SCHOTTKY 200V 200A 2 TOWER (Kg)

Details

Tags

Parameters
Non-rep Pk Forward Current-Max 3000A
Diode Configuration 1 Pair Common Cathode
Reverse Current-Max 3000μA
RoHS Status RoHS Compliant
Factory Lead Time 1 Week
Lifecycle Status PRODUCTION (Last Updated: 5 months ago)
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Twin Tower
Diode Element Material SILICON
Packaging Bulk
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
HTS Code 8541.10.00.80
Terminal Position UPPER
Terminal Form UNSPECIFIED
JESD-30 Code R-PUFM-X2
Operating Temperature (Max) 150°C
Number of Elements 2
Element Configuration Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 3mA @ 200V
Voltage - Forward (Vf) (Max) @ If 920mV @ 200A
Operating Temperature - Junction -55°C~150°C
Application POWER
Max Reverse Voltage (DC) 200V
Average Rectified Current 200A
Number of Phases 1
See Relate Datesheet

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