Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | PRODUCTION (Last Updated: 6 months ago) |
Mount | Chassis Mount |
Mounting Type | Chassis Mount |
Package / Case | Twin Tower |
Diode Element Material | SILICON |
Packaging | Bulk |
Published | 2010 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Max Operating Temperature | 175°C |
Min Operating Temperature | -40°C |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
JESD-30 Code | R-PUFM-X2 |
Number of Elements | 2 |
Element Configuration | Common Cathode |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Diode Type | Schottky |
Current - Reverse Leakage @ Vr | 5mA @ 20V |
Voltage - Forward (Vf) (Max) @ If | 650mV @ 100A |
Forward Current | 400A |
Max Reverse Leakage Current | 1μA |
Operating Temperature - Junction | -55°C~150°C |
Max Surge Current | 3kA |
Output Current-Max | 200A |
Application | POWER |
Current - Average Rectified (Io) | 400A DC |
Max Reverse Voltage (DC) | 40V |
Average Rectified Current | 400A |
Number of Phases | 1 |
Peak Reverse Current | 1A |
Max Repetitive Reverse Voltage (Vrrm) | 40V |
Diode Configuration | 1 Pair Common Cathode |
RoHS Status | RoHS Compliant |