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MBR600100CT

MBR600100CT datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available at Feilidi


  • Manufacturer: GeneSiC Semiconductor
  • Nocochips NO: 347-MBR600100CT
  • Package: Twin Tower
  • Datasheet: -
  • Stock: 887
  • Description: MBR600100CT datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status PRODUCTION (Last Updated: 6 months ago)
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Twin Tower
Diode Element Material SILICON
Packaging Bulk
Published 2013
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -40°C
HTS Code 8541.10.00.80
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PUFM-X2
Number of Elements 2
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 1mA @ 20V
Voltage - Forward (Vf) (Max) @ If 880mV @ 300A
Forward Current 600A
Max Reverse Leakage Current 1μA
Max Surge Current 4kA
Output Current-Max 300A
Application POWER
Current - Average Rectified (Io) 300A
Max Reverse Voltage (DC) 100V
Average Rectified Current 600A
Number of Phases 1
Peak Reverse Current 1A
Max Repetitive Reverse Voltage (Vrrm) 100V
Diode Configuration 1 Pair Common Cathode
RoHS Status RoHS Compliant
See Relate Datesheet

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