Parameters | |
---|---|
Mount | Chassis Mount |
Mounting Type | Chassis Mount |
Package / Case | Twin Tower |
Diode Element Material | SILICON |
Packaging | Bulk |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
HTS Code | 8541.10.00.80 |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
JESD-30 Code | R-PUFM-X2 |
Operating Temperature (Max) | 150°C |
Number of Elements | 2 |
Element Configuration | Common Anode |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Diode Type | Schottky |
Current - Reverse Leakage @ Vr | 3mA @ 20V |
Voltage - Forward (Vf) (Max) @ If | 580mV @ 300A |
Operating Temperature - Junction | -55°C~150°C |
Application | POWER |
Max Reverse Voltage (DC) | 20V |
Average Rectified Current | 300A |
Number of Phases | 1 |
Non-rep Pk Forward Current-Max | 4000A |
Diode Configuration | 1 Pair Common Anode |
Reverse Current-Max | 3000μA |
RoHS Status | RoHS Compliant |