Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | PRODUCTION (Last Updated: 6 months ago) |
Mount | Chassis Mount |
Mounting Type | Chassis Mount |
Package / Case | Twin Tower |
Diode Element Material | SILICON |
Packaging | Bulk |
Published | 2012 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Max Operating Temperature | 150°C |
Min Operating Temperature | -40°C |
HTS Code | 8541.10.00.80 |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
JESD-30 Code | R-PUFM-X2 |
Number of Elements | 2 |
Element Configuration | Common Anode |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Diode Type | Schottky |
Current - Reverse Leakage @ Vr | 1mA @ 20V |
Voltage - Forward (Vf) (Max) @ If | 750mV @ 300A |
Forward Current | 600A |
Max Reverse Leakage Current | 1μA |
Operating Temperature - Junction | -55°C~150°C |
Max Surge Current | 4kA |
Output Current-Max | 300A |
Application | POWER |
Current - Average Rectified (Io) | 300A |
Max Reverse Voltage (DC) | 40V |
Average Rectified Current | 600A |
Number of Phases | 1 |
Peak Reverse Current | 1A |
Max Repetitive Reverse Voltage (Vrrm) | 40V |
Diode Configuration | 1 Pair Common Anode |
RoHS Status | RoHS Compliant |