Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-2 |
Number of Pins | 2 |
Weight | 6.000006g |
Diode Element Material | SILICON |
Packaging | Tube |
JESD-609 Code | e3 |
Pbfree Code | no |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Max Operating Temperature | 150°C |
Min Operating Temperature | -55°C |
Additional Feature | LOW POWER LOSS, FREE WHEELING DIODE |
HTS Code | 8541.10.00.80 |
Subcategory | Rectifier Diodes |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | MBR735 |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Diode Type | Schottky |
Current - Reverse Leakage @ Vr | 100μA @ 35V |
Voltage - Forward (Vf) (Max) @ If | 840mV @ 15A |
Case Connection | CATHODE |
Forward Current | 7.5A |
Operating Temperature - Junction | -55°C~150°C |
Application | EFFICIENCY |
Forward Voltage | 840mV |
Max Reverse Voltage (DC) | 35V |
Average Rectified Current | 7.5A |
Number of Phases | 1 |
Peak Reverse Current | 100μA |
Max Repetitive Reverse Voltage (Vrrm) | 35V |
Capacitance @ Vr, F | 400pF @ 4V 1MHz |
Peak Non-Repetitive Surge Current | 150A |
Max Forward Surge Current (Ifsm) | 150A |
Height | 8.89mm |
Length | 10.4mm |
Width | 4.82mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |