MBR8H100MFST1G
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Diode Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Additional Feature | LOW POWER LOSS |
| Subcategory | Rectifier Diodes |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PDSO-F5 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Schottky |
| Current - Reverse Leakage @ Vr | 2μA @ 100V |
| Voltage - Forward (Vf) (Max) @ If | 900mV @ 8A |
| Case Connection | CATHODE |
| Forward Current | 8A |
| Operating Temperature - Junction | -55°C~175°C |
| Output Current-Max | 8A |
| Application | EFFICIENCY |
| Forward Voltage | 810mV |
| Max Reverse Voltage (DC) | 100V |
| Average Rectified Current | 8A |
| Number of Phases | 1 |
| Peak Reverse Current | 60nA |
| Max Repetitive Reverse Voltage (Vrrm) | 100V |
| Peak Non-Repetitive Surge Current | 75A |
| Max Forward Surge Current (Ifsm) | 75A |
| Reverse Voltage (DC) | 100V |
| Height | 1.1mm |
| Length | 6.3mm |
| Width | 5.3mm |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
