MBRD835LT4G
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 16 hours ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Diode Element Material | SILICON |
| Packaging | Cut Tape (CT) |
| Published | 2005 |
| Series | SWITCHMODE™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Additional Feature | FREE WHEELING DIODE |
| HTS Code | 8541.10.00.80 |
| Subcategory | Rectifier Diodes |
| Voltage - Rated DC | 35V |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 8A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MBRD835 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Polarity | Standard |
| Element Configuration | Single |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Schottky |
| Current - Reverse Leakage @ Vr | 1.4mA @ 35V |
| Output Current | 8A |
| Voltage - Forward (Vf) (Max) @ If | 510mV @ 8A |
| Case Connection | CATHODE |
| Forward Current | 8A |
| Max Reverse Leakage Current | 1.4mA |
| Operating Temperature - Junction | -65°C~150°C |
| Max Surge Current | 75A |
| Application | POWER |
| Halogen Free | Halogen Free |
| Forward Voltage | 510mV |
| Max Reverse Voltage (DC) | 35V |
| Average Rectified Current | 8A |
| Number of Phases | 1 |
| Peak Reverse Current | 1.4mA |
| Max Repetitive Reverse Voltage (Vrrm) | 35V |
| Peak Non-Repetitive Surge Current | 75A |
| Max Forward Surge Current (Ifsm) | 75A |
| Height | 2.2606mm |
| Length | 6.1976mm |
| Width | 6.731mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
