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MBT35200MT1G

MBT35200MT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-MBT35200MT1G
  • Package: SOT-23-6
  • Datasheet: PDF
  • Stock: 516
  • Description: MBT35200MT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 35V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1.5A 1.5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 310mV @ 20mA, 2A
Collector Emitter Breakdown Voltage 35V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage -260mV
Max Breakdown Voltage 35V
Collector Base Voltage (VCBO) 55V
Emitter Base Voltage (VEBO) 5V
hFE Min 100
Height 1mm
Length 3.1mm
Width 1.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Package / Case SOT-23-6
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -35V
Max Power Dissipation 625mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -2A
Frequency 100MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MBT35200
Pin Count 6
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Power - Max 625mW
Transistor Application SWITCHING
Halogen Free Halogen Free
Gain Bandwidth Product 100MHz
See Relate Datesheet

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