MBT6429DW1T1G
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Surface Mount | YES |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 40V |
| Max Power Dissipation | 150mW |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 200mA |
| Frequency | 700MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MBT6429D |
| Pin Count | 6 |
| Number of Elements | 2 |
| Polarity | NPN |
| Element Configuration | Dual |
| Power Dissipation | 150mW |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 700MHz |
| Transistor Type | 2 NPN (Dual) |
| Collector Emitter Voltage (VCEO) | 45V |
| Max Collector Current | 200mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 500 @ 100μA 5V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Collector Emitter Breakdown Voltage | 45V |
| Transition Frequency | 100MHz |
| Collector Emitter Saturation Voltage | 600mV |
| Max Breakdown Voltage | 45V |
| Collector Base Voltage (VCBO) | 55V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 500 |
| Height | 1mm |
| Length | 2.2mm |
| Width | 1.35mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
